unisonic technologies co., ltd ugv3040 insulated gate bipolar transistor www.unisonic.com.tw 1 of 4 copyright ? 2016 unisonic technologies co., ltd qw-r219-011.g 300mj, 400v n-channel ignition igbt ? description the utc ugv3040 is an n-channel ignition insulated gate bipolar transistor. it uses utc?s advanced technology to provide customers with outstanding scis capability. the utc ugv3040 is suitable for coil ?on plug applications and automotive ignition coil driver circuits, etc. ? features * outstanding scis capability * logic level gate drive ? symbol ? ordering information ordering number pin assignment lead free halogen free package 1 2 3 packing UGV3040L-TA3-T ugv3040g-ta3-t to-220 g c e tube ugv3040l-tf3-t ugv3040g-tf3-t to-220f g c e tube ugv3040l-tn3-r ugv3040g-tn3-r to-252 g c e tape reel ugv3040l-tq2-t ugv3040g-tq2-t to-263 g c e tube ugv3040l-tq2-r ugv3040g-tq2-r to-263 g c e tape reel note: pin assignment: g: gate c: collector e: emitter UGV3040L-TA3-T (1)packing type (2)package type (3)green package (1) t: tube, r: tape reel (2) ta3: to-220, tf3: to-220f, tn3: to-252 tq2: to-263 (3) l: lead free, g: halogen free and lead free ? marking
ugv3040 insulated gate bipolar transistor unisonic technologies co., ltd 2 of 4 www.unisonic.com.tw qw-r219-011.g ? absolute maximum ratings (t a =25 c, unless otherwise specified) parameter symbol ratings unit collector to emitter breakdown voltage bv cer 450 v emitter to collector voltag e reverse battery condition bv ecs 30 v t j =25c, i scis =14.2a, l=3.0mhy 300 mj at starting t j = 150c, i scis =10.6a, l=3.0mhy e scis 170 mj t c =25c 21 a continuous collector current t c =110c i c 17 a gate to emitter voltage continuous v gem 10 v to-220/to-263 125 to-220f 41.6 power dissipation total at t c =25c to-252 125 w to-220/to-263 1 to-220f 0.332 power dissipation derating t c >25c to-252 p d 1 w/c electrostatic discharge voltage at 100pf, 1500 ? esd 4 kv junction temperature t j -40 ~ +175 c storage temperature range t stg -40 ~ +175 c note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? thermal characteristics parameter symbol ratings unit to-220/to-252 to-263 1.0 junction to case to-220f jc 3.0 c/w
ugv3040 insulated gate bipolar transistor unisonic technologies co., ltd 3 of 4 www.unisonic.com.tw qw-r219-011.g ? electrical characteristics (t a =25 c, unless otherwise specified) parameter symbol test conditions min typ max unit off state characteristics collector to emitter breakdown voltage bv cer i c =2ma, v ge =0v, r g =1k ? , t j =-40~150c 350 400 450 v collector to emitter to breakdown voltage bv ces i c =10ma, v ge =0v, r g =0, t j =-40~150c 400 450 500 v emitter to collector breakdown voltage bv ecs i c =-75ma, v ge =0v, t c =25c 30 v gate to emitter breakdown voltage bv ges i ges =2ma 12 14 v t c =25c 25 a collector to emitter leakage current i cer v cer =250v, r g =1k ? t c =150c 1 ma t c =25c 1 ma emitter to collector leakage current i ecs v ec =24v t c =150c 40 ma series gate resistance r 1 70 ? gate to emitter resistance r 2 10k 26k ? on state characteristics i c =6a, v ge =4v t c =25c 1.25 1.60 v i c =10a, v ge =4.5v t c =150c 1.40 1.80 v collector to emitter saturation voltage v ce(sat) i c =15a, v ge =4.5v t c =150c 1.90 2.20 v dynamic characteristics gate charge q g(on) i c =10a, v ce =12v, v ge =5v 17 nc gate to emitter threshold voltage v ge(th) i c =1.0ma, v ce =v ge 1.3 2.2 v gate to emitter plateau voltage v gep i c =10a, v ce =12v 3.0 v switching characteristics current turn-on delay time-resistive t d(on)r 0.48 4 s current rise time-resistive t rr 2.1 7 s current turn-off delay time-inductive t d(off)l 1.4 15 s current fall time inductive t fl v ce =14v, r l =1 ? , v ge =5v, r g =1k ? , t j =25c 2.2 15 s self clamped inductive switching scis t j = 25c, l=3.0mhy, r g =1k ? , v ge =5v 300 mj notes: 1. pulse test: pulse width 300s, duty cycle 2% 2. essentially independent of operating temperature
ugv3040 insulated gate bipolar transistor unisonic technologies co., ltd 4 of 4 www.unisonic.com.tw qw-r219-011.g ? test circuit and waveforms utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
|
